A planar Gunn diode operating above 100 GHz
A planar Gunn diode operating above 100 GHz
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DOI：
10.1109/led.2007.904218
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发表时间：
2007-10-01
影响因子：
4.9
通讯作者：
Cumming, D. R. S.
中科院分区：
文献类型：
--
作者：
Khalid, A.;Pilgrim, N. J.;Cumming, D. R. S.
我们展示了一个108 GHz的平面古恩二极管结构的GaAs/AlGaAs制作的实验实现。由于这种器件适合于集成到毫米波和太赫兹集成电路中，因此对它们有相当大的兴趣。所使用的材料是通过分子束外延生长的，并且使用电子束光刻制造设备。由于振荡频率由光刻控制的阳极-阴极距离定义，该技术在制造单芯片太赫兹源方面显示出巨大的前景。
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits. The material used was grown by molecular beam epitaxy, and devices were made using electron beam lithography. Since the frequency of oscillation is defined by the lithographically controlled anode-cathode distance, the technology shows great promise in fabricating single chip terahertz sources.