Japanese R&D Activities of High Efficiency III-V Compound Multi-Junction and Concentrator Solar Cells

Japanese R&D Activities of High Efficiency III-V Compound Multi-Junction and Concentrator Solar Cells
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DOI:
10.1016/j.egypro.2012.02.031
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发表时间:
2012
期刊:
Energy Procedia
影响因子:
--
通讯作者:
M. Yamaguchi
M. Yamaguchi
中科院分区:
--
文献类型:
--
作者:
M. Yamaguchi

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本文综述了日本在III-V化合物多结(MJ)和聚光太阳电池方面的研究开发活动。由于高效率电池的先进技术开发和InGaP材料优异的抗辐射性能的发现,基于InGaP的MJ太阳能电池已在日本用于空间用途。用InGaP/GaAs/InGaAs三结太阳电池在1太阳下获得了35.8%的新的世界记录。由具有不同带隙能量的多层膜组成的MJ太阳能电池具有高达50%以上的高转换效率的潜力,并且由于其宽广的光响应而在空间和地面应用中具有广阔的前景。为了解决高性能、高稳定性隧道结难以制作的问题,作者提出了一种双异质结结构隧道结,以防止隧道结的扩散,提高隧道结的性能。NREL提出了用InGaP材料代替AlGaAs作为上电池材料。由于开发了高效率电池的先进技术,以及作者发现了InGaP基材料优异的抗辐射能力,InGaP基MJ太阳能电池自2002年以来甚至在日本也已商业化用于太空用途。最近,夏普用反向外延生长的InGaP/GaAs/InGaAs三结电池实现了1太阳AM1.5G的世界纪录效率(35.8%)。由于在日本大多数城市,聚光器组件每年产生的能量大约是14%的多晶硅组件的1.7-2.6倍,因此聚光器光伏(光伏)作为除第一种晶体硅光伏和第二种薄膜光伏技术之外的第三种光伏技术,有望为广泛的光伏应用降低电力成本做出贡献。
This paper reviews Japanese R&D activities of III-V compound multi-junction (MJ) and concentrator solar cells. As a result of advanced technologies development for high efficiency cells and discovery of superior radiation-resistance of InGaP based materials, InGaP-based MJ solar cells have been commercialised for space use in Japan. A new world-record efficiency of 35.8% at 1 sun has been achieved with InGaP/GaAs/InGaAs 3-junction solar cell. MJ solar cells composing of multi-layers with different bandgap energies have the potential for achieving high conversion efficiencies of over 50% and are promising for space and terrestrial applications due to wide photo response. In order to solve the problems of difficulties in making high performance and stable tunnel junctions, a double hetero (DH) structure tunnel junction was found to be useful for preventing diffusion from the tunnel junction and improving the tunnel junction performance by the authors. An InGaP material instead of AlGaAs for the top cell was proposed by NREL. As a result of advanced technologies development for high efficiency cells and discovery of superior radiation-resistance of InGaP-based materials by the authors, InGaP-based MJ solar cells have been commercialised for space use even in Japan since 2002. Most recently, world-record efficiency (35.8%) at 1-sun AM1.5G has been realised with inverted epitaxial grown InGaP/GaAs/InGaAs 3-junction cells by Sharp. Since the concentrator modules have been demonstrated to produce roughly 1.7 to 2.6 times more energy per area per annum than the 14% multicrystalline silicon modules in most cities in Japan, concentrator PV (Photovoltaics) as the 3rd PV technologies in addition to the 1st crystalline Si PV and the 2nd thin-film PV technologies are expected to contribute to electricity cost reduction for widespread PV applications.