Ambipolar quantum dots in intrinsic silicon
Ambipolar quantum dots in intrinsic silicon
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DOI：
10.1063/1.4898704
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发表时间：
2014-10-13
影响因子：
4
通讯作者：
Ferguson, A. J.
中科院分区：
文献类型：
--
作者：
Betz, A. C.;Gonzalez-Zalba, M. F.;Ferguson, A. J.
我们用静电定义的隧道势垒来电测量本征硅量子点。p型和n型欧姆接触的存在使电子或空穴的积累成为可能。因此，我们能够研究同一设备内的两种传输机制。我们研究了隧道势垒和静电定义量子点的影响。在空穴传导的情况下，隧道势垒下的电荷态有更大的局域化，导致p型区更高的电荷噪声。(C) 2014 AIP出版有限责任公司
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime. (C) 2014 AIP Publishing LLC.