Recent progress in lasers on silicon
Recent progress in lasers on silicon
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DOI：
10.1038/nphoton.2010.167
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发表时间：
2010-08-01
期刊：
影响因子：
35
通讯作者：
Bowers, John E.
中科院分区：
文献类型：
--
作者：
Liang, Di;Bowers, John E.
硅激光器长期以来一直是半导体科学家的目标，过去十年中的许多重要突破都集中在硅作为光子平台上。本文综述了这一领域的最新进展，包括采用跑道环形谐振腔的低阈值硅拉曼激光器，第一台室温下工作的硅基锗激光器，以及混合硅微片和微盘激光器。简要讨论了晶体硅中载流子跃迁物理的基本原理。解释了在硅上创建激光器的几种重要方法的基础知识，并讨论了与这些方法相关的挑战和机遇。
Silicon lasers have long been a goal for semiconductor scientists, and a number of important breakthroughs in the past decade have focused attention on silicon as a photonic platform. Here we review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers. The fundamentals of carrier transition physics in crystalline silicon are discussed briefly. The basics of several important approaches for creating lasers on silicon are explained, and the challenges and opportunities associated with these approaches are discussed.