Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step
Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step
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低温氢化步骤前后氧化 n 型高阻 FZ 硅中的深层能级
DOI：
10.1149/1.1595665
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发表时间：
2003
影响因子：
3.9
通讯作者：
P. Clauws
中科院分区：
文献类型：
--
作者：
E. Simoen;C. Claeys;R. Job;A. Ulyashin;W. Fahrner;G. Tonelli;O. D. Gryse;P. Clauws
根特大学固体科学系，B-9000 Gent，德国。n型燕麦带~FZ！硅已经被研究使用分析技术的组合。在掺杂态材料中，用深能级瞬态谱观察到大量的深能级。对应的参数~浓度、活化能、陷阱特征！给出的，并讨论了可能的身份鉴于存在的氧和其他杂质的材料。此外，还研究了低温氢等离子体预退火对氧热施主OTDs形成的影响。和其他与氧有关的浅热施主~性病！在450°C下描述。结果表明，氧化HR FZ硅中OTD的引入速率远小于直拉硅中OTD的引入速率。事实上，对于等离子体处理后在450°C下进行的短暂退火，STD主要是在样品表面附近产生的。© 2003 The Electrochemical Society。@DOI：10.1149/1.1595665#保留所有权利。2002年7月7日提交的手稿; 2003年3月18日收到的修订稿。2003年7月10日电子版。
Department of Solid-State Sciences, Ghent University, B-9000 Gent, BelgiumThe behavior of oxygen in oxygen-doped high-resistivity~HR! n-type float-zone~FZ! silicon has been studied using a combinationof analytical techniques. In the as-doped material, a large number of deep levels have been observed with deep-level transientspectroscopy. The corresponding parameters ~concentration, activation energy, and trap signature! are given, and the possibleidentity is discussed in view of the presence of oxygen and other impurities in the material. In addition, the impact of alow-temperature hydrogen-plasma preannealing on the formation of oxygen thermal donors~OTDs! and other oxygen-relatedshallow thermal donors ~STDs! at 450°C is described. It is shown that the introduction rate of OTDs in oxygenated HR FZ siliconis much smaller than in Czochralski silicon. In fact, for short anneals at 450°C following a plasma treatment, the STDs are theones which have been predominantly created near the surface of the samples.© 2003 The Electrochemical Society. @DOI: 10.1149/1.1595665# All rights reserved.Manuscript submitted July 7, 2002; revised manuscript received March 18, 2003. Available electronically July 10, 2003.