BIEXCITONS BOUND TO SINGLE-ISLAND INTERFACE DEFECTS
BIEXCITONS BOUND TO SINGLE-ISLAND INTERFACE DEFECTS
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双激子与单岛界面缺陷结合
DOI：
10.1103/physrevb.56.4702
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发表时间：
1997
影响因子：
3.7
通讯作者：
G. Bastard
中科院分区：
文献类型：
--
作者：
O. Heller;P. Lelong;G. Bastard
我们计算了深量子阱中与单岛界面缺陷结合的双激子的结合能。变分函数的应用导致主要是分析性的计算。我们详细讨论了双激子结合能对缺陷尺寸和量子阱宽度的依赖性。数值计算是针对缺陷深度为 1 和 2 个单层的 Al x Ga 1− x As/G a As 量子阱进行的，与最近的实验结果相对应。此外，我们尝试将局域双激子问题与不同限制结构和不同质量比的自由四粒子分子的现有结果相关联。
We calculate the binding energy of biexcitons bound to single-island interface defects in deep quantum wells. The application of a variational function leads to a calculation that is mostly analytical. We discuss in detail the dependence of the biexciton binding energy on the defect size and the quantum-well width. The numerical calculations are carried out for Al x Ga 1− x A s/G a A s quantum wells with defect depths of 1 and 2 monolayers corresponding to recent experimental findings. Furthermore, we attempt to correlate our problem of a localized biexciton with the existing results for free four-particle molecules in different confinement structures and for different mass ratios.