Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
复制标题
DOI：
10.3390/app8060974
复制
发表时间：
2018-06-01
影响因子：
2.7
通讯作者：
Kim, Hyun-Seok
中科院分区：
文献类型：
--
作者：
Kwak, Hyeon-Tak;Chang, Seung-Bo;Kim, Hyun-Seok
在这项研究中，一个高性能的AlGaN/GaN高电子迁移率晶体管（HEMT），以改善其电气操作，采用内场板（IFP）结构。在IFP结构分析之前，我们比较了所制造的二指状传统T形栅极HEMT的测量和模拟直流特性。然后，AlGaN/GaN HEMT与漏侧场板（FP）结构，建议提高击穿电压特性。最后，IFP结构与器件的栅极头连接，以补偿射频特性，选择漏极侧FP结构的最佳长度。与0.8 m拉伸FP结构相比，IFP结构表现出改善的频率特性，击穿电压差异最小。分析了不同钝化层厚度对频率的影响，确定了最佳钝化层厚度。因此，IFP AlGaN/GaN HEMT是一个有前途的候选人，为高功率和高频应用。
In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure. Prior to the IFP structure analysis, we compared the measured and simulated direct current characteristics of the fabricated two-finger conventional T-shaped gate HEMTs. Then, the AlGaN/GaN HEMT with a drain-side field plate (FP) structure was suggested to enhance the breakdown voltage characteristics. The maximum breakdown voltage recorded with a 0.8 m stretched FP structure was 669 V. Finally, the IFP structure was interfaced with the gate head of the device to compensate the radio frequency characteristics, choosing the optimum length of the drain-side FP structure. Compared to the 0.8 m stretched FP structure, the IFP structure showed improved frequency characteristics with minimal difference to the breakdown voltage. The frequency variation caused by changing the passivation thickness was also analyzed, and the optimum thickness was identified. Thus, IFP AlGaN/GaN HEMT is a promising candidate for high-power and high-frequency applications.