Single‐atom point contact devices fabricated with an atomic force microscope
Single‐atom point contact devices fabricated with an atomic force microscope
复制标题
用原子力显微镜制造的单原子点接触装置
DOI：
10.1063/1.117946
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发表时间：
1996
影响因子：
4
通讯作者：
P. Campbell
中科院分区：
文献类型：
--
作者：
E. Snow;Doewon Park;P. Campbell
据报道，利用原子力显微镜对铝薄膜进行阳极氧化来制造原子点接触。原位电测量用作反馈来控制铝纳米线的制造，随后通过其横截面进行阳极氧化以形成点接触。当点接触的电导降低到~5×10−4 S 以下时，它开始以~2e2/h 的离散步长减小。在某些设备中，我们能够将电导稳定在接近 2e2/h 的值，这对应于单个原子大小的导电通道。
The fabrication of atomic point contacts by using anodic oxidation of thin Al films with an atomic force microscope is reported. In situ electrical measurements were used as feedback to control the fabrication of Al nanowires that were subsequently anodized through their cross section to form point contacts. When the conductance of a point contact is reduced below ∼5×10−4 S it starts to decrease in discrete steps of ∼2e2/h. In some devices we are able to stabilize the conductance at a value near 2e2/h which corresponds to a single, atomic‐sized conducting channel.