Optimizing the growth of 1.3 μm InAs/GaAs quantum dots
Optimizing the growth of 1.3 μm InAs/GaAs quantum dots
复制标题
优化 1.3 μm InAs/GaAs 量子点的生长
DOI：
10.1103/physrevb.64.235317
复制
发表时间：
2001
影响因子：
3.7
通讯作者：
R. Murray
中科院分区：
文献类型：
--
作者：
P. Joyce;T. J. Krzyzewski;G. Bell;T. Jones;E. Ru;R. Murray
扫描探针显微镜已经被用来显示InAs/GaAs量子点(QD)可以用连续的InAs沉积生长(以非常低的生长速率)，最多可达5个单层(ML)，而不会合并QD。这些生长条件导致了相对较大的相干量子点，当用GaAs覆盖时，这些量子点在1.3微米波长处表现出较强的室温光致发光。随着InAs覆盖率增加到5毫升，封顶前的平均量子点体积单调增加，但在覆盖3毫升后，发光波长饱和约1.3微米。这是由于存在更大的、不规则的、塑性松弛的三维孤岛，这些孤岛充当额外沉积材料的汇，不参与光学发射。
Scanning probe microscopy has been used to show that InAs/GaAs quantum dots (QD's) can be grown (at very low growth rates) using continuous InAs depositions of up to five monolayers (ML) without QD coalescence. These growth conditions result in relatively large coherent QD's which exhibit strong room temperature photoluminescence (PL) at a wavelength of 1.3 \ensuremath{\mu}m when capped with GaAs. The average QD volume prior to capping increases monotonically with InAs coverage up to 5 ML, but the PL emission wavelength saturates around 1.3 \ensuremath{\mu}m after \ensuremath{\sim}3 ML. This is due to the presence of much larger, irregular and plastically relaxed three-dimensional islands which act as sinks for additional deposited material and do not participate in optical emission.