Photoisomerization -induced manipulation of single-electron tunneling for novel Si-based optical memory
Photoisomerization -induced manipulation of single-electron tunneling for novel Si-based optical memory
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新型硅基光存储器的光异构化诱导单电子隧道操纵
DOI：
10.1021/am403616m
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Yutaka Wakayama
中科院分区：
文献类型：
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作者：
Ryoma Hayakawa;Kenji Higashiguchi;Kenji Mtsuda;Toyohiro Chikyow;Yutaka Wakayama
我们通过金属-绝缘体-半导体（MIS）结构中二乙烯分子的光异构化证明了单电子隧穿（SET）的光学操纵。强调在MIS结构的实际器件配置中实现器件操作，而在基于纳米间隙电极和扫描探针技术的结构中无法实现器件操作。也就是说，这是一种具有大规模集成潜力的基本内存设备配置。在我们的装置中，SET的阈值电压被清楚地调制为光异构化引起的分子轨道的可逆变化，表明二乙烯分子可以作为光学可控的量子点。这些发现将使光子功能集成到当前基于硅的存储设备中，这是有机分子的独特特征，是无机材料无法实现的。因此，我们提出的器件具有巨大的潜力，可以为硅技术提供突破。
We demonstrated optical manipulation of single-electron tunneling (SET) by photoisomerization of diarylethene molecules in a metal–insulator–semiconductor (MIS) structure. Stress is placed on the fact that device operation is realized in the practical device configuration of MIS structure and that it is not achieved in structures based on nanogap electrodes and scanning probe techniques. Namely, this is a basic memory device configuration that has the potential for large-scale integration. In our device, the threshold voltage of SET was clearly modulated as a reversible change in the molecular orbital induced by photoisomerization, indicating that diarylethene molecules worked as optically controllable quantum dots. These findings will allow the integration of photonic functionality into current Si-based memory devices, which is a unique feature of organic molecules that is unobtainable with inorganic materials. Our proposed device therefore has enormous potential for providing a breakthrough in Si technology.