Shifting Donor-Acceptor Photoluminescence in N-doped ZnO(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
Shifting Donor-Acceptor Photoluminescence in N-doped ZnO(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
复制标题
DOI：
10.1143/jpsj.75.073701
复制
发表时间：
2006-05
影响因子：
1.7
通讯作者：
T. Makino;A. Tsukazaki;A. Ohtomo;M. Kawasaki;H. Koinuma
中科院分区：
文献类型：
--
作者：
T. Makino;A. Tsukazaki;A. Ohtomo;M. Kawasaki;H. Koinuma
我们采用两种外延方法在晶格匹配的ScAlMgO - 4衬底上生长了氮掺杂ZnO薄膜。我们测量了两种ZnO:N层在供体-受体-对过渡区的光致发光（PL）。用波动模型分析了PL峰移的激发强度依赖性，证明了我们观察到的生长技术依赖性可以用带电杂质分布的不均匀性来解释。结果表明，在氮浓度相似的情况下，用该方法制备的样品的不均匀性明显减小。受体的活化能估计为≈170 meV，与氮浓度无关。
We have grown nitrogen-doped ZnO films by two kinds of epitaxial methods on lattice-matched ScAlMgO 4 substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor–acceptor-pair transition region. The analysis of the excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence can be explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process that provides showing better electrical properties was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptors has been evaluated to be ≈ 170 meV, which is independent of the nitrogen concentration.