Evaluation of Floating Zone and Epitaxial Planar Silicon Detectors With Different Substrate Thickness After Irradiation up to $2\times 10^{16}$ ${\rm n}_{\rm eq}$ cm$^{- 2}$
Evaluation of Floating Zone and Epitaxial Planar Silicon Detectors With Different Substrate Thickness After Irradiation up to $2\times 10^{16}$ ${\rm n}_{\rm eq}$ cm$^{- 2}$
复制标题
不同基板厚度的浮区和外延平面硅探测器在辐照后的评估 $2 imes 10^{16}$ ${ m n}_{ m eq}$ cm$^{- 2}$
DOI：
10.1109/tns.2009.2034315
复制
发表时间：
2009
影响因子：
1.8
通讯作者：
M. Wormald
中科院分区：
文献类型：
--
作者：
G. Casse;A. Affolder;P. Allport;M. Wormald
由于硅传感器在粒度、分辨率和速度方面具有无与伦比的性能，同时提供相对较低的质量，因此它被用于所有主流高能物理实验的跟踪器和顶点检测器。目前的大型强子对撞机（超级强子对撞机，sLHC）的预期未来升级将需要在速度和低质量方面具有类似性能的探测器，但要增加粒度和更大的辐射容忍度。考虑到sLHC的要求，从不同的硅材料、不同的电极几何形状和不同的有源衬底厚度等多个角度研究了硅传感器的辐射硬化。有人提出，如果探测器比公认的标准厚度（300微米）薄，可能会有好处。研究了在强子辐照强度（中子当量为2 × 1016 1 MeV /cm2）下，厚度对细段硅传感器性能的影响。本文首次比较了在200 μ m n型浮子区（FZ）和150 μ m高阻外延硅衬底上制作的微带探测器与薄（140 μ m）和标准p型器件的电荷收集性能。
Silicon sensors are used for the tracker and vertex detectors of all the main current high energy physics experiments because of their unsurpassed performance in terms of granularity, resolution and speed while offering relatively low mass. The anticipated future upgrade of the present Large Hadron Collider (the Super LHC, sLHC) will require detectors with similar performance in terms of speed and low mass, but with increased granularity and a factor often more radiation tolerance. The radiation hardening of silicon sensors, given the sLHC requirements, is being investigated from many angles: different silicon materials, different electrode geometries and varying the thickness of the active substrate. It has been proposed that possible advantages could be achieved with detectors thinner than the accepted standard of 300 ¿m. The effect of the thickness on the performances of finely segmented silicon sensors after severe hadron irradiation (up to 2 × 1016 1 MeV neutron equivalent/cm2) is presented. For the first time, the charge collection properties of microstrip detectors made on 200 ¿m n-type float zone (FZ) and 150 ¿m high resistivity epitaxial silicon substrates are compared with thin (140 ¿m) and standard p-type devices.