Current-sensorless control of an SPWM H-Bridge-based PFC rectifier designed considering voltage sag condition
Current-sensorless control of an SPWM H-Bridge-based PFC rectifier designed considering voltage sag condition
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DOI：
10.1016/j.epsr.2015.09.005
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发表时间：
2016
影响因子：
3.9
通讯作者：
J. R. Rodríguez-Rodríguez-J.-R.-Rodríguez-Rodríguez-1403426370;E. Moreno-Goytia;V. Venegas-Rebollar;D. Campos-Gaona;R. A. Félix;L. E. Ugalde-Caballero
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文献类型：
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作者：
J. R. Rodríguez-Rodríguez-J.-R.-Rodríguez-Rodríguez-1403426370;E. Moreno-Goytia;V. Venegas-Rebollar;D. Campos-Gaona;R. A. Félix;L. E. Ugalde-Caballero
本文提出并详细介绍了H桥PFC整流器的控制方案。这种控制是一个进步，在无传感器电流控制方案的单相双向整流器的性能改善。H桥PFC整流器基于由直流参考信号供电的单个PI控制器环路设计。关于动态操作条件，所提出的控制可以在输入（电压暂降）和输出（负载阶跃变化）端口处的变化条件下维持经调节的DC电压，同时在这些条件中的任何一个条件下维持单位功率因数（PF）和恒定THD电流输入。与其他研究不同的是，该控制方案使用SPWM，不需要变量变换到dq 0参考系，并且不再需要PI控制器级附带的复杂补偿器。因此，该建议旨在降低控制方案的复杂性并改善PFC整流器的整体动态响应。从缩小的原型装置，这是为了研究目的而建立的实验结果，验证了控制律，数学模型和仿真和实验之间的定量比较，都考虑到电感和半导体开关的寄生电阻。
This paper presents and details the H-Bridge PFC rectifier control scheme. This control is a step forward in sensorless current control schemes for performance improvements of single-phase bidirectional rectifiers. The H-Bridge PFC rectifier is designed based on a single PI controller loop fed by DC reference signals. Regarding dynamic operating conditions, the proposed control can maintain a regulated DC voltage under varying conditions at input (voltage sags) and output (load step changes) ports while maintaining an unitary power factor (PF) and constant THD current input at any of these conditions. Different to other investigations, this control proposal uses SPWM, does not require a variable transformation into the dq0 reference frame, and the complex compensators accompanying to the PI controller stage are no longer needed. Therefore, this proposal is aimed to reduce the complexity of the control scheme and to improve the overall dynamic response of the PFC rectifier. The experimental results obtained from the scaled-down prototype setup, which was built for research purposes, validate the control law, mathematical model and quantitative comparison between simulation and experiment, both considering the parasitic resistances of the inductor and semiconductor switches.