A CMOS Image Sensor Integrated with Plasmonic Colour Filters
A CMOS Image Sensor Integrated with Plasmonic Colour Filters
复制标题
DOI：
10.1007/s11468-012-9360-6
复制
发表时间：
2012-12-01
期刊：
影响因子：
3
通讯作者：
Cumming, D. R. S.
中科院分区：
文献类型：
--
作者：
Chen, Q.;Das, D.;Cumming, D. R. S.
采用电子束光刻和干法刻蚀技术，将多个像素、4.5×9微米的等离子体滤色器直接集成在互补金属氧化物半导体图像传感器(CIS)的顶面上。100x100像素等离子CIS在由光电流测量确定的可见光范围内显示出全色彩灵敏度。滤光片是利用单一的光刻步骤在简单的工艺中制造的。这将与使用染料掺杂聚合物时的传统多步加工进行比较。这些等离子体元件与标准的cmos工艺的内在兼容性使得它们可以在靠近光电二极管的金属层中制造。这种等离子组件的加入可能在未来使先进的独联体的开发具有低成本、低串扰和增强功能。
Multi-pixel, 4.5 x 9 mu m, plasmonic colour filters, consisting of periodic subwavelength holes in an aluminium film, were directly integrated on the top surface of a complementary metal oxide semiconductor (CMOS) image sensor (CIS) using electron beam lithography and dry etch. The 100 x 100-pixel plasmonic CIS showed full colour sensitivities across the visible range determined by a photocurrent measurement. The filters were fabricated in a simple process utilising a single lithography step. This is to be compared with the traditional multi-step processing when using dye-doped polymers. The intrinsic compatibility of these plasmonic components with a standard CMOS process allows them to be manufactured in a metal layer close to the photodiodes. The incorporation of such plasmonic components may in the future enable the development of advanced CIS with low cost, low cross-talk and increased functionality.