Surface nitridation of silicon dioxide with a high density nitrogen plasma
Surface nitridation of silicon dioxide with a high density nitrogen plasma
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高密度氮等离子体对二氧化硅进行表面氮化
DOI：
10.1116/1.589516
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发表时间：
1997
影响因子：
1.4
通讯作者：
S. Hattangady
中科院分区：
文献类型：
--
作者：
R. Kraft;T. Schneider;W. W. Dostalik;S. Hattangady
用螺旋等离子体源产生的高密度氮等离子体已经被用来将大约15at. %的氮结合到二氧化硅层的顶部0.5 nm中。表面氮化是在10 S用高通量的低能离子完成的，这些离子是从高密度氮等离子体中提取出来的，并在等离子体鞘中加速朝向电浮二氧化硅表面。利用射频补偿的朗缪尔探头测量了氮离子能量和离子电流密度随氮气压力和源功率的变化。氮离子能量、离子电流密度和曝光时间决定了氮离子进入二氧化硅表面的范围和剂量。在先进的互补金属氧化物半导体工艺流程中，该工艺可能有利于栅氧化物的氮化。
A high density nitrogen plasma generated with a helicon plasma source has been used to incorporate approximately 15 at. % nitrogen into the top 0.5 nm of a silicon dioxide layer. The surface nitridation was accomplished in 10 s with a high flux of low energy ions which were extracted from the high density nitrogen plasma and accelerated in the plasma sheath towards the surface an electrically floating silicon dioxide surface. A rf compensated Langmuir probe was used to measure the nitrogen ion energy and ion current density as a function of the nitrogen pressure and source power. The nitrogen ion energy, ion current density, and exposure time determine the nitrogen range and dose into the silicon dioxide surface. This process may be advantageous for nitriding the gate oxide in advanced complementary metal–oxide semiconductor process flows.