Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETs
Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETs
复制标题
石墨烯/b-BN FET 中单个空位缺陷对 1/f 噪声的影响
DOI：
10.1109/drc.2018.8442196
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Shahrjerdi, Davood
中科院分区：
文献类型：
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作者：
Wu, Ting;Alharbi, Abdullah;Taniguchi, Takashi;Watanabe, Kenji;Shahrjerdi, Davood
sp2碳材料，包括碳纳米管和石墨烯，已被广泛用于制造高灵敏度的生物化学场效应晶体管（FET）传感器。先前的研究表明，这些材料中的结构紊乱增强了设备的灵敏度。尽管有许多关于结构缺陷对器件灵敏度的研究，但只有少数研究研究了石墨烯FET中缺陷对低频噪声的影响[1]。然而，还没有研究调查特定类型的缺陷，例如单空位缺陷，和石墨烯晶体管的低频噪声特性之间的相关性。本文系统地研究了石墨烯场效应管中单空位缺陷浓度、低频噪声和载流子输运之间的关系。
sp2carbon materials, including carbon nanotubes and graphene, have been used extensively for making highly sensitive biochemical field-effect transistor (FET) sensors. Previous studies suggest that structural disorders in these materials enhance the device sensitivity. Despite many studies on device sensitivity in relation to structural defects, only a few studies have examined the effect of defects on low-frequency noise in graphene FETs [1]. However, no study has yet investigated the correlation between the specific type defects, e.g. single vacancy defects, and the low-frequency noise characteristics of graphene transistors. Here, we systematically study the connection between the concentration of single vacancy defects, the low-frequency noise and carrier transport in graphene FETs.