SiC/SiO2 Interface States: Properties and Models
SiC/SiO2 Interface States: Properties and Models
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DOI：
10.4028/www.scientific.net/msf.483-485.563
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发表时间：
2005-02
期刊：
影响因子：
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通讯作者：
V. Afanas’ev;F. Ciobanu;S. Dimitrijev;G. Pensl;A. Stesmans
中科院分区：
文献类型：
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作者：
V. Afanas’ev;F. Ciobanu;S. Dimitrijev;G. Pensl;A. Stesmans
碳化硅氧化表面缺陷的性质表明，它们的起源不同于通常在氧化硅中观察到的悬挂键型缺陷。在过去十年中提出的这些碳化硅/氧化物界面态的不同模型中，有两个得到了大量的实验支持。第一种是“碳团簇”模型，它将碳化硅禁带中的能级陷阱归因于碳化硅表面处理和随后的氧化过程中形成的元素碳夹杂物。第二种模型用SiO_2的本征缺陷来解释在接近SiC导带的能量范围内的高密度界面态。讨论了在降低碳化硅/二氧化硅缺陷密度方面取得的成果。
Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the dangling-bond-type defects commonly observed in the oxidized silicon. Among different models of these SiC/oxide interface states advanced during the past decade, two have received substantial experimental support. This first one is the “carbon cluster” model, which ascribes the traps with energy levels in the SiC bandgap to inclusions of elemental carbon formed during the SiC surface treatment and subsequent oxidation. The second model invokes intrinsic defects of SiO2 to account for the high density of interface states in the energy range close to the conduction band of SiC. Achievements in reducing the SiC/SiO2 defect density are discussed.