Modulating the optical and electrical properties of MAPbBr3single crystals via voltage regulation engineering and application in memristors
Modulating the optical and electrical properties of MAPbBr3single crystals via voltage regulation engineering and application in memristors
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通过电压调节工程调制 MAPbBr3 单晶的光学和电学特性及其在忆阻器中的应用
DOI：
10.1038/s41377-020-00349-w
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发表时间：
2020-06-30
影响因子：
19.4
通讯作者：
Guo, Chunlei
中科院分区：
文献类型：
--
作者：
Xing, Jun;Zhao, Chen;Guo, Chunlei
缺陷密度是钙钛矿单晶（PSCs）最重要的特性之一，决定了它们的光学和电学性质，但很少有策略可以调节这种性质。在这里，我们证明了电压调节是一种有效的方法来调整缺陷密度，以及PSCs的光学和电学性质。提出MAPbBr3PSCs的三步载流子输运模型，通过应用偏置探讨缺陷调控机制和载流子输运动力学。动态和稳态光致发光测量表明，表面缺陷密度、平均载流子寿命和光致发光强度可以通过施加的偏置有效地调节。其中，当调节电压为20 V（电极化强度为0.167 V μm−1）时，MAPbBr3PSCs表面缺陷密度降低了24.27%，载流子寿命延长了32.04%，发光强度提高了112.96%。此外，稳压的MAPbBr3PSC忆阻器具有可调的多电阻、弱离子迁移效应和大大增强的器件稳定性。电压调节是开发先进钙钛矿光电器件的一项很有前途的工程技术。
Defect density is one of the most significant characteristics of perovskite single crystals (PSCs) that determines their optical and electrical properties, but few strategies are available to tune this property. Here, we demonstrate that voltage regulation is an efficient method to tune defect density, as well as the optical and electrical properties of PSCs. A three-step carrier transport model of MAPbBr3PSCs is proposed to explore the defect regulation mechanism and carrier transport dynamics via an applied bias. Dynamic and steady-state photoluminescence measurements subsequently show that the surface defect density, average carrier lifetime, and photoluminescence intensity can be efficiently tuned by the applied bias. In particular, when the regulation voltage is 20 V (electrical poling intensity is 0.167 V μm−1), the surface defect density of MAPbBr3PSCs is reduced by 24.27%, the carrier lifetime is prolonged by 32.04%, and the PL intensity is increased by 112.96%. Furthermore, a voltage-regulated MAPbBr3PSC memristor device shows an adjustable multiresistance, weak ion migration effect and greatly enhanced device stability. Voltage regulation is a promising engineering technique for developing advanced perovskite optoelectronic devices.