Asymmetric Alkylthienyl Thienoacenes Derived from Anthra[2,3-b]thieno[2,3-d]thiophene for Solution-Processable Organic Semiconductors.
Asymmetric Alkylthienyl Thienoacenes Derived from Anthra[2,3-b]thieno[2,3-d]thiophene for Solution-Processable Organic Semiconductors.
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DOI：
10.1021/acsami.6b15793
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发表时间：
2017-03
影响因子：
9.5
通讯作者：
Y. Ogawa;Kazuhiro Yamamoto;Chiyo Miura;S. Tamura;Mitsuki Saito;Masashi Mamada;D. Kumaki;S. Tokito;H. Katagiri
中科院分区：
文献类型：
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作者：
Y. Ogawa;Kazuhiro Yamamoto;Chiyo Miura;S. Tamura;Mitsuki Saito;Masashi Mamada;D. Kumaki;S. Tokito;H. Katagiri
蒽[2，3-B]噻吩并[2，3-D]噻吩（ATT）很容易从噻吩并[3，2-B]噻吩和2，3-萘二羧酸酐获得，允许在末端噻吩环处选择性取代，从而提供不对称的单烷基和单烷基噻吩基噻吩并苯。烷基取代的ATT（CnATT，n = 6，8，10，12）具有p型场效应晶体管（FET）的特性，迁移率为0.01 cm 2 V-1 s-1量级，与ATT相同。相反，烷基噻吩基取代的ATT（CnTATT，n = 6，8，10，12）表现出0.15-1.9 cm 2 V-1 s-1的FET迁移率，这比ATT和CnATT高出多达2个数量级。此外，CnTATT通过旋涂和滴铸两者形成结晶薄膜，并且C8 TATT特别地在滴铸膜中表现出高达1.6cm2V-1 s-1的迁移率。CnTATT薄膜的X-射线衍射图案表明，分子在衬底表面具有在面内方向上高度有序的结构，成为定向的边缘上。因此，CnTATT用作可溶液加工的p型有机场效应晶体管，其中额外的噻吩环显著有助于高度有序的薄膜结构和高载流子迁移率。
Anthra[2,3-b]thieno[2,3-d]thiophene (ATT), which is readily accessed from thieno[3,2-b]thiophene and 2,3-naphthalenedicarboxylic anhydride, allows for selective substitution at the terminal thiophene ring, thereby providing asymmetric monoalkyl and monoalkylthienyl thienoacenes. Alkyl-substituted ATT (CnATT, n = 6, 8, 10, 12) has characteristics of a p-type field-effect transistor (FET), with mobility on the order of 0.01 cm2 V-1 s-1, which is the same as ATT. Conversely, alkylthienyl-substituted ATT (CnTATT, n = 6, 8, 10, 12) exhibits FET mobility of 0.15-1.9 cm2 V-1 s-1, which is up to 2 orders of magnitude greater than that of ATT and CnATT. Moreover, CnTATT forms crystalline thin films both by spin coating and drop casting, and C8TATT in particular exhibits a mobility of up to 1.6 cm2 V-1 s-1 in the drop-cast film. X-ray diffraction patterns of CnTATT thin films indicate that the molecules become oriented edge-on at the substrate surface with a highly ordered structure in the in-plane direction. Accordingly, CnTATT serves as a solution-processable p-type organic field-effect transistor, where the additional thiophene ring contributes significantly to the highly ordered thin-film structure and the high carrier mobility.