Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate
Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate
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DOI：
10.1016/j.jcrysgro.2004.04.107
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发表时间：
2004-07
影响因子：
1.8
通讯作者：
H. Murakami;Y. Kangawa;Y. Kumagai;A. Koukitu
中科院分区：
文献类型：
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作者：
H. Murakami;Y. Kangawa;Y. Kumagai;A. Koukitu
