Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
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DOI：
10.1063/1.125400
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发表时间：
1999-12-06
影响因子：
4
通讯作者：
Abstreiter, G
中科院分区：
文献类型：
--
作者：
Chu, L;Zrenner, A;Abstreiter, G
报道了自组装InAs/GaAs量子点在垂直入射和多程波导中的子带间光电流谱。导带中的束缚到连续跃迁能量位于200-500 meV的光谱范围内。偏振相关光电流谱表明InAs量子点的子带间跃迁几乎与入射光的偏振无关。(C)1999年美国物理学会。【S0003-6951（99）00249-1】。
We report on intersubband photocurrent spectroscopy of self-assembled InAs/GaAs quantum dots (QDs) both in normal incidence and in multipass waveguide geometry. The bound-to-continuum transition energy in the conduction band lies in the 200-500 meV spectral range. Polarization dependent photocurrent spectroscopy shows that the intersubband transitions in the InAs-QDs are nearly independent of the polarization of the incoming radiation. (C) 1999 American Institute of Physics. [S0003-6951(99)00249-1].