High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
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DOI：
10.1063/1.2951615
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发表时间：
2008-06-23
影响因子：
4
通讯作者：
Chen, Kevin J.
中科院分区：
文献类型：
--
作者：
Chen, Wanjun;Wong, King-Yuen;Chen, Kevin J.
采用与常关型AlGaN/GaN HEMT相同的工艺，实现了一种与高电子迁移率晶体管（HEMT）兼容的低导通电压功率横向场效应整流器（L-FER），为GaN功率集成电路提供了一种低成本的解决方案。功率整流器的特点是阴极和阳极之间的肖特基栅极控制的二维电子气通道。通过将肖特基栅极和阳极连接在一起，整流器的正向导通电压由沟道的阈值电压而不是肖特基势垒决定。漂移长度为10 μ m的L-FER在电流密度为100 A/cm（2）时正向导通电压为0.63 V。该器件在1 mA/mm的电流水平下还表现出390 V的反向击穿电压（BV）和1.4 m Ω cm（2）的比导通电阻（R（ON，sp）），产生108 MW/cm（2）的品质因数（BV（2）/R（ON，sp））。该器件具有优良的器件性能，加上横向器件结构和与AlGaN/GaN HEMT工艺兼容性，使其成为GaN功率集成电路的理想选择。(c)2008年美国物理学会。
A high electron mobility transistor (HEMT)-compatible power lateral field-effect rectifier (L-FER) with low turn-on voltage is demonstrated using the same fabrication process as that for normally off AlGaN/GaN HEMT, providing a low-cost solution for GaN power integrated circuits. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn-on voltage of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L-FER with a drift length of 10 mu m features a forward turn-on voltage of 0.63 V at a current density of 100 A/cm(2). This device also exhibits a reverse breakdown voltage (BV) of 390 V at a current level of 1 mA/mm and a specific on resistance (R(ON,sp)) of 1.4 m Omega cm(2), yielding a figure of merit (BV(2)/R(ON,sp)) of 108 MW/cm(2). The excellent device performance, coupled with the lateral device structure and process compatibility with AlGaN/GaN HEMT, make the proposed L-FER a promising candidate for GaN power integrated circuits. (c) 2008 American Institute of Physics.