Influence of oxygen pressure on the electrical properties of Mn-doped Bi0.5Na0.5TiO3-BaTiO3 thin films by pulsed laser deposition
Influence of oxygen pressure on the electrical properties of Mn-doped Bi0.5Na0.5TiO3-BaTiO3 thin films by pulsed laser deposition
复制标题
氧压对脉冲激光沉积Mn掺杂Bi0.5Na0.5TiO3-BaTiO3薄膜电性能的影响
DOI：
10.1016/j.ceramint.2019.04.056
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发表时间：
2019
影响因子：
5.2
通讯作者：
Wang Feifei
中科院分区：
文献类型：
--
作者：
Jiao Shan;Zhang Yi;Duan Zhihua;Wang Tao;Tang Yanxue;Zhao Xiangyong;Sun Dazhi;Shi Wangzhou;Wang Feifei
采用脉冲激光沉积法，在不同氧分压下，在(111)Pt/Ti/SiO_2/Si衬底上制备了掺锰0.935Bi0.5Na0.5TiO3-0.065BaTiO3(MnBNBT)铁电薄膜。获得了(100)择优取向和致密的钙钛矿结构薄膜。在氧分压为25 Pa时制备的MnBNBT薄膜具有良好的铁电P-Eloop结构，平均剩余极化强度为27 μC/cm~2，矫顽场Ec为5.7 kV/mm，相对介电常数为1295。对薄膜的漏电流特性进行了分析，结果表明薄膜的欧姆导电行为和Fowler-Nordheim隧穿是薄膜的主要机制。压电力显微镜分析表明，MnBNBT薄膜具有良好的局部压电响应和多域态。结果表明，所制备的无铅薄膜在铁电和压电器件中具有潜在的应用前景。
Ferroelectric Mn-doped 0.935Bi0.5Na0.5TiO3-0.065BaTiO3(MnBNBT) thin films were fabricated on (111)Pt/Ti/SiO2/Si substrates via pulsed laser deposition under different oxygen pressures. (100)-preferred orientation and dense films with perovskite structure were grown. The MnBNBT thin film deposited at an optimized oxygen pressure of 25 Pa exhibited a well-defined ferroelectricP-Eloop with an average remnant polarizationProf 27 μC/cm2, a coercive fieldEcof 5.7 kV/mm, and a high relative dielectric constant of 1295. The leakage current characteristics were assessed, demonstrating that the ohmic conduction behaviors and Fowler-Nordheim tunneling were the main mechanisms of the MnBNBT thin films. Piezoelectric force microscopy indicated that the MnBNBT films possessed favorable local piezoelectric responses and multidomain states. The results suggest that the lead-free thin film produced is potentially applicable in ferroelectric and piezoelectric devices.