Integrated Semiconductor Quantum Dot Scintillation Detector: Ultimate Limit for Speed and Light Yield
Integrated Semiconductor Quantum Dot Scintillation Detector: Ultimate Limit for Speed and Light Yield
复制标题
集成半导体量子点闪烁探测器:速度和光产额的极限
DOI:
10.1109/tns.2015.2502426
复制
发表时间:
2016
影响因子:
1.8
通讯作者:
P. Murat
中科院分区:
文献类型:
--
作者:
S. Oktyabrsky;M. Yakimov;V. Tokranov;P. Murat
A picosecond-range timing of charged particles and photons is a long-standing challenge for many high-energy physics, biophysics, medical and security applications. We present a design, technological pathway and challenges, and some properties important for realization of an ultrafast high-efficient room-temperature semiconductor scintillator based on self-assembled InAs quantum dots (QD) embedded in a GaAs matrix. Low QD density (<; 1015 cm-3), fast (~5 ps) electron capture, luminescence peak redshifted by 0.2-0.3 eV from GaAs absorption edge with fast decay time (0.5-1 ns) along with the efficient energy transfer in the GaAs matrix (4.2 eV/pair) allows for fabrication of a semiconductor scintillator with the unsurpassed performance parameters. The major technological challenge is fabrication of a large volume (> 1 cm3 ) of epitaxial QD medium. This requires multiple film separation and bonding, likely using separate epitaxial films as waveguides for improved light coupling. Compared to traditional inorganic scintillators, the semiconductor-QD based scintillators could have about 5x higher light yield and 20x faster decay time, opening a way to gamma detectors with the energy resolution better than 1% and sustaining counting rates MHz. Picosecond-scale timing requires segmented low-capacitance photodiodes integrated with the scintillator. For photons, the proposed detector inherently provides the depth-of-interaction information.
影响因子:
4
作者:
Kang, Zhitao;Zhang, Yuelan;Nagarkar, Vivek
通讯作者:
Nagarkar, Vivek