Argon ion irradiation induced phase transition and room temperature ferromagnetism in the CuO thin film
Argon ion irradiation induced phase transition and room temperature ferromagnetism in the CuO thin film
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氩离子辐照诱导 CuO 薄膜的相变和室温铁磁性
DOI：
10.1088/0022-3727/49/5/055003
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发表时间：
2016-02-10
影响因子：
3.4
通讯作者：
Xue, Desheng
中科院分区：
文献类型：
--
作者：
Shi, Shoupeng;Gao, Daqiang;Xue, Desheng
我们用磁控溅射系统通过调节氧气流量来沉积氧化铜薄膜，并发现氩离子辐照后出现了氧化亚铜相。磁测量结果表明，薄膜在辐照后表现出室温铁磁性，而原始的CuO薄膜是抗磁性的。在辐照和相变过程中，晶格中会出现空位和间隙，这些空位和间隙产生于局部磁矩。结合拉曼光谱分析，我们认为薄膜的铁磁性可能来源于Cu空位，这为研究稀磁半导体的磁性机制提供了一种途径。
We have deposited a copper oxide (CuO) thin film using a magnetron sputtering system by modulating rate of oxygen flow, and we found that the phase of cuprous oxide (Cu2O) appeared after irradiation by argon ions. Magnetic measurement results indicate that the thin film exhibits room temperature ferromagnetism after irradiation, while the virgin CuO thin film is diamagnetic. Vacancies and interstitial would appear in the lattice during irradiation and phase transition, which will originate in the local magnetic moment. In combination with the analyses of Raman spectra, we believe that the ferromagnetism of the film may originate from Cu vacancies, which provides an approach in investigating the mechanism of magnetism in the diluted magnetic semiconductor.