Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor
Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor
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DOI：
10.1021/nl901635j
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发表时间：
2010-01-01
期刊：
影响因子：
10.8
通讯作者：
Dzurak, Andrew S.
中科院分区：
文献类型：
--
作者：
Tan, Kuan Yen;Chan, Kok Wai;Dzurak, Andrew S.
我们发展了奈米级双闸极场效电晶体，以研究单一有意植入磷供体的电子态与输运性质。这些器件提供了纳米电子学潜在应用所需的关键参数的高水平控制。对于捐助者，我们解决了相应的两个电荷状态依次被自旋向下和自旋向上的电子占据的过渡。充电能量和Lande g因子与门控纳米结构中的供体的预期一致。
We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.