Electric-field control of spin accumulation signals in silicon at room temperature
Electric-field control of spin accumulation signals in silicon at room temperature
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DOI：
10.1063/1.3643141
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发表时间：
2011-09-26
影响因子：
4
通讯作者：
Hamaya, K.
中科院分区：
文献类型：
--
作者：
Ando, Y.;Maeda, Y.;Hamaya, K.
我们展示了室温下具有 Si 沟道和 CoFe/n(+)-Si 接触的金属氧化物半导体场效应晶体管结构中由栅极电压控制的自旋累积信号。在施加背栅电压的情况下，我们清楚地观察到三端汉勒效应曲线，即自旋累积信号。自旋累积信号的幅度可以随着栅极电压的增加而减小。我们认为栅极控制的自旋信号归因于 CoFe/n(+)-Si 接触下方的 Si 沟道中载流子密度的变化。这项研究不仅是具有栅极结构的硅基自旋电子应用的技术飞跃，而且为室温下自旋注入半导体硅沟道提供了可靠的证据。 (C) 2011 年美国物理研究所。 [号码：10.1063/1.3643141]
We demonstrate spin accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/n(+)-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect curves, i.e., spin accumulation signals. The magnitude of spin accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/n(+)-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3643141]