Two-terminal monolithic In0.5Ga0.5P/GaAs tandem solar cells with a high conversion efficiency of over 30%

Two-terminal monolithic In0.5Ga0.5P/GaAs tandem solar cells with a high conversion efficiency of over 30%
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DOI:
10.1143/jjap.36.6215
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发表时间:
1997-10-01
期刊:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
影响因子:
--
通讯作者:
Yang, MJ
Yang, MJ
中科院分区:
其他
文献类型:
--
作者:
Takamoto, T;Ikeda, E;Yang, MJ

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两端单片In0.5Ga0.5P/GaAs串联太阳能电池在一个太阳空气质量1.5全局光照下实现了30.28%的世界纪录效率。单元面积的实际尺寸为 cm(2)。首先,通过提高少数载流子寿命开发了高效率In0.5Ga0.5P单结电池。其次,研究了Galls单结电池以获得更高的开路电压,第三;通过使用InGaP隧道结和AlInP势垒来提高串联电池的性能,AlInP势垒构成双异质结构并增加隧道结的峰值电流。此外,位于InGaP顶部电池下方的AlInP势垒已被发现可有效反射顶部电池中的少数载流子,并可有效抑制外延生长期间锌从高掺杂隧道结向顶部电池的扩散。
A world-record efficiency of 30.28% has been attained for two-terminal monolithic In0.5Ga0.5P/GaAs tandem solar cells under one-sun air-mass 1.5 global illumination. The cell area has a practical size of a cm(2). At first, high efficiency In0.5Ga0.5P single junction cells had been developed by improving the minority carrier lifetime. Second, the Galls single junction cells had been investigated to obtain higher open-circuit voltage, Third; the tandem cell performance had been improved by using an InGaP tunnel junction with AlInP barriers which constitute a double-hetero structure and increase the peak current of the tunnel junction. in addition, the AlInP barrier located beneath the InGaP top cell have been found to be effective for reflecting minority carriers in the top cell and for suppressing the diffusion of zinc from the highly doped tunnel junction toward the top cell during epitaxial growth.