Silicon dioxide fine patterning by reactive fast atom beam etching
Silicon dioxide fine patterning by reactive fast atom beam etching
复制标题
通过反应性快速原子束蚀刻形成二氧化硅精细图案
DOI：
10.1116/1.584215
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发表时间：
1988
影响因子：
1.4
通讯作者：
F. Shimokawa
中科院分区：
文献类型：
--
作者：
H. Kuwano;F. Shimokawa
提出了一种快速原子束技术在二氧化硅衬底图形制作中的应用。本文研究了阴极栅前有电荷交换池的改进型鞍场快原子源在几种放电条件下的工作特性。源中的高压被证明会增加束中高能中性粒子的比例。中性化的趋势与基于共振电荷转移的计算一致。使用CF4 +O2气体混合物的Si和SiO2的最大蚀刻速率在相对CF4气体流速为0.76时实现，并且SiO2的蚀刻速率与Si的蚀刻速率不同，被发现线性地依赖于放电电流。在1.2 kV的放电电压下蚀刻的侧壁几乎垂直。反应性快速原子束蚀刻被证明能够产生高度精确的0.2 μm宽的图案形成。
A fast atom beam technique is applied to silicon dioxide substrate pattern fabrication. A modified Mcllraith (saddle field) fast atom source having a charge exchange cell in front of the cathode grid is studied under several discharge conditions. High pressure in the source is shown to increase the proportion of high‐energy neutral particles in the beam. The tendencies of the neutralizations are in accordance with calculations based on resonance charge transfer. Maximum etch rates for Si and SiO2 using a CF4 +O2 gas mixture are achieved at a relative CF4 gas flow rate of 0.76, and the etch rate for SiO2, unlike that for Si, is found to depend linearly on the discharge current. The etched sidewalls at a discharge voltage of 1.2 kV were nearly perpendicular. Reactive fast atom beam etching proved capable of producing highly accurate 0.2‐μm‐wide pattern formations.