Defect generation in polycrystalline Cu(In,Ga)Se2 by high-energy electron irradiation
Defect generation in polycrystalline Cu(In,Ga)Se2 by high-energy electron irradiation
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高能电子辐照多晶 Cu(In,Ga)Se2 缺陷的产生
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
W. Bolse
中科院分区：
文献类型：
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作者：
A. Jasenek;U. Rau;T. Hahn;G. Hanna;M. Schmidt;M. Hartmann;H. Schock;J. H. Werner;B. Schattat;S. Kraft;K.;W. Bolse
摘要：我们研究了空间应用的ZnO/CdS/ Cu（In，Ga）Se 2异质结太阳能电池的退化以及多晶Cu（In，Ga）Se 2薄膜中缺陷的产生，这些缺陷是通过1 MeV电子辐照产生的，其能量密度为φe至φe=5×1018 cm-2。太阳能电池性能的显著退化开始于φe=1017 cm-2的注量，其中开路电压降低约5%，而短路电流和填充因子基本上保持不受影响。因此，Cu（In，Ga）Se 2太阳能电池与其它技术相比耐受高一个数量级或更多的电子注量。模型描述了考虑电子辐照引起的缺陷增加空间电荷复合的绝对开路电压损失。通过导纳谱的缺陷分析表明，从价带的能量距离约为300 meV的受主缺陷以γ=0.017（±0.01）cm-1的速率产生。
Abstract.We investigate the degradation of ZnO/CdS/ Cu(In,Ga)Se2 heterojunction solar cells for space applications and the defect generation in polycrystalline Cu(In,Ga)Se2 thin films by irradiation with 1-MeV electrons with fluences φe up to φe=5×1018 cm-2. Notable degradation of the solar cell performance starts at fluences of φe=1017 cm-2 where the open circuit voltage decreases by about 5% while short circuit current and fill factor remain essentially unaffected. Thus, Cu(In,Ga)Se2 solar cells withstand electron fluences which are higher by one order of magnitude or more when compared to other technologies. A model describes the absolute open circuit voltage loss considering the increase of space charge recombination by electron irradiation-induced defects. Defect analysis by admittance spectroscopy shows that acceptor defects with an energy distance of approximately 300 meV from the valence band are generated at a rate γ=0.017 (±0.01) cm-1.