Raman properties of silicon nanoparticles

Raman properties of silicon nanoparticles
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DOI:
10.1016/j.physe.2005.12.030
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发表时间:
2006-05-01
影响因子:
3.3
通讯作者:
Wiaers, H
Wiaers, H
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Meier, C;Lüttjohann, S;Wiaers, H

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实验研究了尺寸为d=3.5-60 nm的纳米硅的拉曼光谱。观测到了高达二阶的散射过程。在声子限制模型的框架下对实验结果进行了分析。虽然该模型定性地描述了一阶散射过程的观测值,但它不适用于高阶散射过程。从二级散射的分析,我们确定了TO声子在X点和L点的红移。(C)2006爱思唯尔B.V.保留所有权利。
The Raman spectra of silicon nanoparticles in the size range between d = 3.5-60 nm have been studied experimentally. Scattering processes up to second order are being observed. The experimental results are analyzed in the framework of the phonon confinement model. While this model describes qualitatively the observations for first-order scattering processes, it is not applicable for scattering processes of higher order. From the analysis of second-order scattering, we determine a redshift of the TO phonon at the X and L points. (c) 2006 Elsevier B.V. All rights reserved.