Work Function Adjustment by Nitrogen Incorporation in HfN x Gate Electrode with Post Metal Annealing
Work Function Adjustment by Nitrogen Incorporation in HfN x Gate Electrode with Post Metal Annealing
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通过在 HfN x 栅电极中掺入氮并进行金属后退火来调整功函数
DOI：
10.1149/1.2200010
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发表时间：
2006
影响因子：
--
通讯作者：
K. Fan
中科院分区：
文献类型：
--
作者：
Chao‐Sung Lai;S. Peng;T. Pan;J. Wang;K. Fan
在直流反应溅射中，用氮对铪的功函数进行了修正。HfNx薄膜的电阻率在氮气流量比为10%时仍足够低。此外，随着N2流量比的增加，功函数从导带（4.1eV）向带隙中部（4.55eV）调谐.从X射线衍射数据可以看出，在超过8% N2流量比的样品中可以观察到HfN（200）峰，这是HfNx薄膜功函数增加的原因。
The work function of hafnium (Hf) was modified by nitrogen (N) in dc reactive sputtering. The resistivity of the HfN x thin film is sufficiently low up to the N 2 flow ratio of 10%. In addition, the work function is tuned from conduction band (4.1 eV) to midgap (4.55 eV) with increasing N 2 flow ratio. From the X-ray diffraction data, the HfN(200) peak can be observed from the samples which exceed the 8% N 2 flow ratio, which is responsible for the work function increase of the HfN x film.