AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics
AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics
复制标题
DOI：
10.1364/prj.7.000b12
复制
发表时间：
2019-06
影响因子：
7.6
通讯作者：
Xianhe Liu;Kishwar Mashooq;D. Laleyan;E. Reid;Z. Mi
中科院分区：
文献类型：
--
作者：
Xianhe Liu;Kishwar Mashooq;D. Laleyan;E. Reid;Z. Mi
AlGaN纳米晶体已经成为未来在紫外（UV）光谱范围内操作的光电器件的构建块。在这篇文章中，我们描述了AlGaN半导体紫外发光二极管（LED）和面发射紫外激光二极管的设计和性能特点。介绍了AlGaN纳米晶体的选择区域外延和结构、光学和电学性质。最后讨论了AlGaN半导体发光二极管和激光二极管的实验演示。
AlGaN nanocrystals have emerged as the building blocks of future optoelectronic devices operating in the ultraviolet (UV) spectral range. In this article, we describe the design and performance characteristics of AlGaN nanocrystal UV light-emitting diodes (LEDs) and surface-emitting UV laser diodes. The selective-area epitaxy and structural, optical, and electrical properties of AlGaN nanocrystals are presented. The recent experimental demonstrations of AlGaN nanocrystal LEDs and laser diodes are also discussed.