Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixing
Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixing
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自组织In0.5Ga0.5As/GaAs量子点特性的选择性控制：量子点混合
DOI：
10.1063/1.1311828
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发表时间：
2000
影响因子：
3.2
通讯作者：
J. Marsh
中科院分区：
文献类型：
--
作者：
D. Bhattacharyya;A. Helmy;A. C. Bryce;E. Avrutin;J. Marsh
对单层自组织In0.5Ga0.5As/GaAs量子点（QD）结构的光致发光（PL）波长进行了选择性后生长控制。这是通过使用不同的电介质帽对点进行快速热处理来实现的。选择性的带隙位移超过100毫电子伏的样品之间获得溅射和等离子体增强二氧化硅沉积覆盖的区域下的带隙位移小于70毫电子伏的等离子体增强化学气相沉积二氧化硅覆盖。同时观察了不同帽层对PL谱线宽度的影响。差分带隙偏移将使得能够在QD系统中集成无源和有源器件。
Selective postgrowth control of the photoluminescence (PL) wavelength has been demonstrated for a single layer self-organized In0.5Ga0.5As/GaAs quantum dot (QD) structure. This was achieved by rapid thermal processing of dots using different dielectric caps. Selective band gap shifts of over 100 meV were obtained between samples capped with sputtered and plasma enhanced silica deposition, with the band gap shift under regions covered with plasma enhanced chemical vapor deposition SiO2 less than 70 meV. The effects of different caps on the PL linewidth were also observed. The differential band gap shift will enable the integration of passive and active devices in QD systems.
影响因子：
4
作者：
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者：
PETROFF, PM
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H