X-ray diffraction study of Ge-Bi-Te mixed-layer ternary compounds
X-ray diffraction study of Ge-Bi-Te mixed-layer ternary compounds
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Ge-Bi-Te混层三元化合物的X射线衍射研究
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
V. Zemskov
中科院分区：
文献类型：
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作者：
O. G. Karpinskii;L. E. Shelimova;M. Kretova;V. Zemskov
用X射线衍射法研究了GeTe·mBi 2 Te 3同系化合物Ge 3Bi 2 Te 6、GeBi 6 Te 10和Ge 2Bi 10 Te 17的结构。对于Ge 3Bi 2 Te 6，确定了原子坐标、晶格参数和原子间距离。该化合物被证明含有混合（Ge + Bi）阳离子层。测定了GeBi_6 Te_（10）和Ge_2Bi_（10）Te_（17）六方晶胞的c参数。结果表明，单晶nGeTe·mBi_2Te_3化合物解理面的X射线花样随n/m比的增大而发生系统的变化，这是由于Te八面体空位的填充所致.对于00 l反射，指数l可以通过n和m以一般形式表示。
The structures of the Ge3Bi2Te6, GeBi6Te10, and Ge2Bi10Te17 compounds, belonging to thenGeTe ·mBi2Te3 homologous series, were studied by x-ray diffraction. For Ge3Bi2Te6, the atomic coordinates, lattice parameters, and interatomic distances were determined. This compound was shown to contain mixed (Ge + Bi) cation layers. The c parameters of the hexagonal cells of GeBi6Te10 and Ge2Bi10Te17 were determined. It is shown that the x-ray patterns from the cleaved surfaces of single-crystalnGeTe ·mBi2Te3 compounds vary in a systematic manner with increasingn/m ratio, which is attributable to the filling of empty Te octahedra. For 00l reflections, indexl can be expressed in general form throughn andm.