Antisymmetric Magnetoresistance due to Domain-Wall Tilting in Perpendicularly Magnetized Films
Antisymmetric Magnetoresistance due to Domain-Wall Tilting in Perpendicularly Magnetized Films
复制标题
垂直磁化薄膜中畴壁倾斜引起的反对称磁阻
DOI：
10.1103/physrevapplied.17.014013
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发表时间：
2022
影响因子：
4.6
通讯作者：
Hongwu Zhao
中科院分区：
文献类型：
--
作者：
Yangtao Su;Yang Meng;Haibin Shi;Li Wang;Xinyu Cao;Ying Zhang;Runwei Li;Hongwu Zhao
电流流过磁畴壁往往会遇到额外的非凡。电阻。在薄壁极限下，非对称场反对称磁电阻的出现打破了Onsager对称性，这似乎是由单壁和非对称电流注入几何结构的组合决定的。然而，精细的磁结构和测量配置难以实现，并且在多畴结构中观察到的异常输运性质尚未完全理解。本文报道了在磁场梯度控制的多畴结构中，由于畴壁倾斜而引起的反对称磁电阻效应。我们从实验和理论上证明了反常磁电阻是由倾斜畴壁附近的非平衡电流引起的，这种非平衡电流基本上受倾斜畴壁的几何因子的控制。
Electrical currents flowing through magnetic domain walls tend to encounter additional extraordinary.resistance. At the thin-wall limit, the occurrence of anomalous-field antisymmetric magnetoresistance.breaks Onsager symmetry, which seems to be determined by the combination of single-wall and.perpendicular-current-injection geometry. However, the delicate magnetic structure and measurement configuration.are hard to implement, and the abnormal transport properties observed in multidomain structures.are not fully understood. Here, we report the observation of antisymmetric magnetoresistance due to.domain-wall tilting in a multidomain structure controlled by a magnetic field gradient. We demonstrate,.both experimentally and theoretically, that the anomalous magnetoresistance arises from the nonequilibrium.current in the vicinity of tilting domain walls, which are basically governed by the geometry factor.of the tilting walls.