Low on-resistance and fast switching of 13-kV SiC MOSFETs with optimized junction field-effect transistor region
Low on-resistance and fast switching of 13-kV SiC MOSFETs with optimized junction field-effect transistor region
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具有优化结型场效应晶体管区域的低导通电阻和快速开关 13kV SiC MOSFET
DOI：
10.23919/ispsd.2017.7988982
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Masaki Furumai
中科院分区：
文献类型：
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作者：
H. Kitai;Y. Hozumi;H. Shiomi;K. Fukuda;Masaki Furumai
本文采用多能量氮离子注入技术，研制了一种结型场效应晶体管（JFET）区具有倒掺杂分布的13 kV SiC MOSFET，用于加速电压大于10 kV的X射线发生器和电子枪电源。利用器件模拟对JFET区域进行了优化，以降低导通电阻。采用5 mm × 5 mm的芯片尺寸制作了具有优化JFET区的SiC MOSFET。比导通电阻（<inf>RonA</inf>）估计为169 mΩ·cm<sup>2</sup>。在10 μA/cm<sup>2时</sup>，阻断电压（<inf>BVDSS</inf>）为13.1kV.由于栅极氧化层中的电场（E<inf>ox</inf>）较低，在-15 V的栅极电压（相当于-3 MV/cm的电场）和200 °C下1000小时，实现了± 0.06 V范围内的阈值电压（<inf>Vth</inf>）漂移。在室温条件下，当直流母线电压为10 kV时，带感性负载的动态测试结果表明，开关的关断和开通速度分别为75 kV/μs和114 kV/μs。
In this paper, a 13-kV SiC MOSFET with a retrograde doping profile in junction field-effect transistor (JFET) regions, which were implanted by nitrogen ions with multiple energies, has been developed for power supplies of X-ray generators and electron guns with an accelerating voltage greater than 10 kV. A JFET region was optimized with device simulation to reduce on-resistance. A SiC MOSFET with an optimized JFET region was fabricated with a 5 mm × 5 mm die size. The specific on-resistance (R<inf>onA</inf>) was estimated to be 169 mΩ·cm<sup>2</sup>. The blocking voltage (BV<inf>DSS</inf>) of 13.1 kV was obtained at 10 μA/cm<sup>2</sup>. Owing to a low electric field in the gate oxide (E<inf>ox</inf>), a threshold voltage (V<inf>th</inf>) shift within ± 0.06 V was achieved at the gate voltage of −15 V (equal to an electric field of −3 MV/cm) and 200 °C for 1000 hours. The dynamic test with inductive load resulted in turn-off and turn-on switching speeds of 75 kV/μs and 114 kV/μs, respectively, for the DC bus voltage of 10 kV at room temperature.