Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
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DOI：
10.1039/c1jm14190b
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发表时间：
2012-01
影响因子：
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通讯作者：
J. M. Yoon;H. Jeong;S. Hong;Y. Yin;H. Moon;Seong-Jun Jeong;J. Han;Yong In Kim;Yong-Tae Kim;Heon-Kyu Lee;S. Kim;J. Y. Lee
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文献类型：
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作者：
J. M. Yoon;H. Jeong;S. Hong;Y. Yin;H. Moon;Seong-Jun Jeong;J. Han;Yong In Kim;Yong-Tae Kim;Heon-Kyu Lee;S. Kim;J. Y. Lee
我们展示了锥形TiN/Ge2Sb2Te5 (GST)/TiN纳米阵列的制备和相变存储性能，该纳米阵列由嵌段共聚物光刻和直接两步蚀刻制备。所创建的30 nm尺度的相变存储电池（天线阵列密度：~ 207 Gbit英寸−2）显示出1.1 V的阈值开关电压，与传统的相变存储电池兼容。更重要的是，当复位电流为100 μA时，高1.8 V、宽100 ns的复位脉冲可以使电池非晶化。如此低的复位电流，可能是纳米级小电池尺寸造成的，对低功耗器件的工作非常有利。可逆地，设定操作是通过设置高1.2 V、宽100 ns、拖尾100 ns的脉冲来完成的。这项工作为相变材料的低功耗和超高密度存储迈出了重要的一步。
We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5 (GST)/TiN nanoarray prepared viablock copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: ∼207 Gbit inch−2) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 μA. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.