Strain relaxation during in situ growth of SrTiO3 thin films
Strain relaxation during in situ growth of SrTiO3 thin films
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DOI：
10.1063/1.1631055
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发表时间：
2003-12-01
影响因子：
4
通讯作者：
Alpay, SP
中科院分区：
文献类型：
--
作者：
Peng, LSJ;Xi, XX;Alpay, SP
本文报道了利用反射高能电子衍射测量SrTiO3薄膜表面的面内晶格常数，实时观察了SrTiO3薄膜原位生长过程中的应变松弛。SrTiO3薄膜中的初始失配应变在MgO上是拉伸的，在LaAlO3上是压缩的，正如薄膜与衬底之间的晶格失配所期望的那样。应变松弛在沉积开始后立即开始，但直到薄膜厚度达到500-2500埃（取决于衬底和沉积温度）才完成。生长温度下的应变松弛会影响薄膜在室温下的应变，对于SrTiO3薄膜，两种衬底的应变都是压缩的。(C) 2003年美国物理研究所。
We report a real-time observation of strain relaxation during in situ growth of SrTiO3 thin films by measuring the in-plane lattice constant at the film surface using reflection high-energy electron diffraction. The initial misfit strain in the SrTiO3 film is tensile on MgO and compressive on LaAlO3 as expected from the lattice mismatches between the film and the substrates. Strain relaxation begins immediately after the deposition starts, but is not complete until the film thickness reaches 500-2500 Angstrom depending on the substrate and the deposition temperature. The strain relaxation at the growth temperature influences the film strain at room temperature, which is compressive for both substrates for thin SrTiO3 films. (C) 2003 American Institute of Physics.