Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system
Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system
复制标题
DOI：
10.1103/physrevlett.94.047204
复制
发表时间：
2005-02-04
影响因子：
8.6
通讯作者：
Jungwirth, T
中科院分区：
文献类型：
--
作者：
Wunderlich, J;Kaestner, B;Jungwirth, T
本文报道了自旋-轨道耦合二维空穴系统中自旋-霍尔效应的实验观测。二维孔层是p-n结发光二极管的一部分，具有特殊设计的共面几何结构，允许在二维孔系统的相对边缘进行角度分辨偏振检测。在平衡状态下，自旋轨道分裂重空穴态的角动量位于二维层的平面上。当电场在孔通道上施加时，检测到角动量的非零面外分量，其符号取决于电场的符号，并且在两个边缘上是相反的。微观量子输运计算只显示了弱的无序效应，这表明清洁极限自旋-霍尔电导描述（本征自旋-霍尔效应）可能适用于我们的系统。
We report the experimental observation of the spin-Hall effect in a 2D hole system with spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed coplanar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the spin-orbit split heavy-hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel, a nonzero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder, suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system.