Study of the crystal growth of a (15,17,1) vicinal plane on a Si(110) surface using high‐temperature scanning tunneling microscopy
Study of the crystal growth of a (15,17,1) vicinal plane on a Si(110) surface using high‐temperature scanning tunneling microscopy
复制标题
使用高温扫描隧道显微镜研究 Si(110) 表面上 (15,17,1) 邻面的晶体生长
DOI：
10.1063/1.356265
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发表时间：
1994
影响因子：
3.2
通讯作者：
M. Iwatsuki
中科院分区：
文献类型：
--
作者：
Y. Yamamoto;T. Sueyoshi;Tomoshige Sato;M. Iwatsuki
利用高温扫描隧道显微镜研究了Si（110）表面（15，17，1）邻晶面的晶体生长，直接观察了表面Si原子在高温下的动力学行为。结果表明，在710 °C时，台阶流动被一个可能是SiC的杂质小丘钉扎并聚束在一起，形成了（17，15，1），（17，15，1），（15，17，1）和（15，17，1）等邻面。邻平面具有刻面结构，并且由单层台阶的周期性布置形成，并且在λ 111 λ方向上具有2.5nm的平台。阶跃边缘方向为1112。在695 °C下，还发现16结构在平坦区域上形成。确认了在约700 °C至室温的温度范围内16结构和邻位面（15，17，1）共存。
High‐temperature scanning tunneling microscopy was used to study the crystal growth of a (15,17,1) vicinal plane on a Si(110) surface, and the dynamic behavior of surface Si atoms at high temperature was directly observed. It was found that an impurity hillock, which may be SiC on the surface, pins step flows and bunches them together to form a vicinal plane such as (17,15,1), (17,15,1), (15,17,1), and (15,17,1) at 710 °C. The vicinal plane has a faceted structure and is formed by a periodic arrangement of monolayer steps and has a terrace of 2.5 nm in the 〈111〉 direction. The step‐edge direction is 〈112〉. At 695 °C, it was also found that the 16 structure was formed on a flat area. It was confirmed that the 16 structure and the vicinal plane (15,17,1) coexisted in a temperature range of about 700 °C to room temperature.