Tuning the ambipolar behaviour of organic field effect transistors via band engineering
Tuning the ambipolar behaviour of organic field effect transistors via band engineering
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DOI：
10.1063/1.5080505
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发表时间：
2019-03
期刊：
影响因子：
1.6
通讯作者：
P. Warren;J. F. M. Hardigree;A. Lauritzen;J. Nelson;M. Riede
中科院分区：
文献类型：
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作者：
P. Warren;J. F. M. Hardigree;A. Lauritzen;J. Nelson;M. Riede
我们报告了一种基于锌酞菁 (ZnPc) 及其氟化衍生物 (F8ZnPc) 共蒸发的双极有机场效应晶体管 (OFET) 中制造平衡空穴和电子传输的方法。 OFET的半导体行为可以从单极p型（空穴迁移率在（1.7±0.1）×10−4 cm2/Vs范围内）到单极n型（电子迁移率在（1.0±0.1）×10−4 cm2/Vs范围内）连续调节。原始 ZnPc 和 F8ZnPc 器件的电流开/关比为 105。通过共蒸发 p 型 ZnPc 与 n 型 F8ZnPc，我们制造了双极晶体管和类似互补的电压逆变器。对于双极器件，空穴和电子迁移率之间的最佳平衡被发现为1:1.5重量比的混合，空穴和电子迁移率分别为(8.3±0.2)×10−7 cm2/Vs和(5.5±0.1)×10−7 cm2/Vs。最后，我们展示了双极器件在互补型电压逆变器电路中的应用，其性能与基于单独的 ZnPc 和 F8ZnPc OFET 的逆变器相当。我们报告了一种基于锌酞菁 (ZnPc) 及其氟化衍生物的共蒸发在双极有机场效应晶体管 (OFET) 中制造平衡空穴和电子传输的方法 (F8ZnPc)。 OFET的半导体行为可以从单极p型（空穴迁移率在（1.7±0.1）×10−4 cm2/Vs范围内）到单极n型（电子迁移率在（1.0±0.1）×10−4 cm2/Vs范围内）连续调节。原始 ZnPc 和 F8ZnPc 器件的电流开/关比为 105。通过共蒸发 p 型 ZnPc 与 n 型 F8ZnPc，我们制造了双极晶体管和类似互补的电压逆变器。对于双极器件，空穴和电子迁移率之间的最佳平衡被发现为1:1.5重量比的混合，空穴和电子迁移率分别为(8.3±0.2)×10−7 cm2/Vs和(5.5±0.1)×10−7 cm2/Vs。最后，我们演示了双极器件在互补型电压逆变器电路中的应用...
We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F8ZnPc). The semiconducting behaviour of the OFET can be tuned continuously from unipolar p-type, with a hole mobility in the range of (1.7 ± 0.1) × 10−4 cm2/Vs, to unipolar n-type, with an electron mobility of (1.0 ± 0.1) × 10−4 cm2/Vs. Devices of the pristine ZnPc and F8ZnPc show a current on/off ratio of 105. By co-evaporating the p-type ZnPc with the n-type F8ZnPc, we fabricate ambipolar transistors and complementary-like voltage inverters. For the ambipolar devices, the optimum balance between the hole and electron mobilities is found for the blend of 1:1.5 weight ratio with hole and electron mobilities of (8.3 ± 0.2) × 10−7 cm2/Vs and (5.5 ± 0.1) × 10−7 cm2/Vs, respectively. Finally we demonstrate application of the ambipolar devices in a complementary-like voltage inverter circuit with the performance comparable to an inverter based on separate ZnPc and F8ZnPc OFETs.We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F8ZnPc). The semiconducting behaviour of the OFET can be tuned continuously from unipolar p-type, with a hole mobility in the range of (1.7 ± 0.1) × 10−4 cm2/Vs, to unipolar n-type, with an electron mobility of (1.0 ± 0.1) × 10−4 cm2/Vs. Devices of the pristine ZnPc and F8ZnPc show a current on/off ratio of 105. By co-evaporating the p-type ZnPc with the n-type F8ZnPc, we fabricate ambipolar transistors and complementary-like voltage inverters. For the ambipolar devices, the optimum balance between the hole and electron mobilities is found for the blend of 1:1.5 weight ratio with hole and electron mobilities of (8.3 ± 0.2) × 10−7 cm2/Vs and (5.5 ± 0.1) × 10−7 cm2/Vs, respectively. Finally we demonstrate application of the ambipolar devices in a complementary-like voltage inverter circuit wi...