Back-illuminated separate absorption and multiplication GaN avalanche photodiodes
Back-illuminated separate absorption and multiplication GaN avalanche photodiodes
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DOI：
10.1063/1.2897039
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发表时间：
2008-03-10
影响因子：
4
通讯作者：
Silversmith, D.
中科院分区：
文献类型：
--
作者：
Pau, J. L.;Bayram, C.;Silversmith, D.
给出了背照型雪崩光电二极管的吸收倍增区分离的特性。有效面积为225微米(2)的器件显示最大倍增增益为41 200。在计算噪声等效功率时，当增益为3000时，最小值为3.3x10(-14)W HZ(-1/2)，在增益为41 200时，最小值为2.0x10(-13)W HZ(-1/2)。分析了响应边沿的展宽作为偏置的函数。(C)2008年美国物理研究所。
The performance of back-illuminated avalanche photodiodes with separate absorption and multiplication regions is presented. Devices with an active area of 225 mu m(2) show a maximum multiplication gain of 41 200. The calculation of the noise equivalent power yields a minimum value of 3.3x10(-14) W Hz(-1/2) at a gain of 3000, increasing to 2.0x10(-13) W Hz(-1/2) at a gain of 41 200. The broadening of the response edge has been analyzed as a function of bias. (C) 2008 American Institute of Physics.