NIST comparison of the quantized Hall resistance and the realization of the SI ohm through the calculable capacitor
NIST comparison of the quantized Hall resistance and the realization of the SI ohm through the calculable capacitor
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NIST 量化霍尔电阻与通过可计算电容器实现 SI 欧姆的比较
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
R. Dziuba
中科院分区：
文献类型：
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作者：
A. Jeffrey;R. Elmquist;L. H. Lee;J. Q. Shields;R. Dziuba
报道了由量子化霍尔电阻(QI-IR)和由可计算电容测量得到的SI欧姆的实现的最新NIST结果。已经进行了各种系统的检查。
The latest NIST results from the comparison of the quantized Hall resistance (QI-IR), with the realization of the SI ohm obtained from the calculable capacitor measurement are reported. Various systematic checks have been performed.