ELECTROLYTIC REDUCTIVE COUPLING .1. ACRYLONITRILE
ELECTROLYTIC REDUCTIVE COUPLING .1. ACRYLONITRILE
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DOI：
10.1149/1.2426086
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发表时间：
1964-01-01
影响因子：
3.9
通讯作者：
BAIZER, MM
中科院分区：
文献类型：
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作者：
BAIZER, MM
如上所述，Greenaway和Cardona（13）已经获得了InSb-In 2 Tea合金的类似反射率数据，并将其与所观察到的Es（7）的变化相关联。在这种情况下，InSb处的Eg的外推值也是0.47 eV。基于上述数据，可以看出室温下InSb中的导带的~ 111~最小值比价带最大值高0.47 eV，并且导带的（000）最小值在被填充到电子主要进入~ 111~最小值之前将接受约9 × 105 TM电子/cm。在上述p型合金的情况下，InSb的价带的结构使得不能发生类似的效果。因此，所有由非化学计量产生的空穴都应在霍尔测量中观察到，由此获得的p值可能远大于9 × 1018/cm 3，并且在不同的合金系统中应有所不同，这是由类似于帕罗特（12）给出的化学考虑确定的。这是观察到的情况下，两个p型系统的调查。类似地，如果考虑这种化合物的n型合金，如GaSb，其中（000）和最小值中的电子之间的有效质量差< 111>相对较小，则所有导带电子都应该对霍尔系数有一些影响。这在别处报道的关于GaSb与Ga 2Se ~和Ga 2 Te ~的合金的工作（15）中得到证实，其中观察到数量级为102~的载流子密度。最后，如果上述对InSb的分析是正确的，那么类似的结果应该适用于InAs。对InAs-In_2 Te ~和InAs-In_2Se ~（8，9）的实验结果表明，InAs的~（111）~最小值在价带顶以上约0.85eV处。
As indicated above, Greenaway and Cardona (13) have obtained similar reflectivity data for the InSb-In2Tea alloys, and have correlated it with the observed variation of E s (7). In this case also the extrapolated value of Eg at InSb is 0.47 ev. On the basis of the above data, it would appear that in InSb at room temperature, the~ 111~ minima of the conduction band are 0.47 ev above the valence band maximum, and that the (000) minimum of the conduction band will accept about 9 x 10 TM electrons/cm before it is so filled that electrons mainly go into the~ 111~ minima. In the case of the p type alloys described above, the structure of the valence band of InSb is such that no similar effect can occur. Thus all holes produced by nonstoichiometry should be observed in the Hall measurements and the value of p thus obtained may be considerably greater than 9 x 1018/cm 3 and should differ from one alloy system to another, being determined by thermodynamical considerations similar to those given by Parrott (12). This is observed to be the case for the two p type systems investigated. Similarly if one considers n type alloys of such a compound as GaSb where the difference in effective mass between electrons in the (000) and< 111> minima is relatively small, all conduction band electrons should have some effect on the Hall coefficient. This is confirmed in work reported elsewhere (15) on alloys of GaSb with Ga2Se~ and Ga2Te~, where carrier densities of the order 102~ are observed. Finally, if the above analysis for InSb is correct, then a similar result should apply for InAs. Results for InAs-In2Te~ and InAs-In2Se~(8, 9) indicate that for InAs the~ 111~ minima be at about 0.85 ev above the valence band maximum.