Gallium-Doped Zinc Oxide Nanoparticle Thin Films as Transparent Electrode Materials with High Conductivity
Gallium-Doped Zinc Oxide Nanoparticle Thin Films as Transparent Electrode Materials with High Conductivity
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DOI：
10.1021/acsanm.0c01471
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发表时间：
2020-10-23
影响因子：
5.9
通讯作者：
Kanie, Kiyoshi
中科院分区：
文献类型：
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作者：
Nishi, Yasutaka;Kasai, Yuki;Kanie, Kiyoshi
以氯化镓和氯化锌为前驱体，在无水甲醇和碱性条件下，采用溶剂热法合成了掺镓氧化锌(GZO)纳米颗粒。系统的研究表明，通过金属氢氧化物缩合得到GZO纳米颗粒而形成的H2O不仅促进了作为副产品的层状化合物的产生，而且还加速了Ostwald熟化，从而减少了镓离子的掺杂量。为了克服纳米颗粒生长过程中产生的H2O，我们首先应用甲醇钠(NaOME)作为合成GZO纳米颗粒的基础。结果表明，通过改变反应混合物中氢氧化钠与氢氧化钠的摩尔比，成功地在单一相中获得了高性能的GZO纳米粒子，并将其平均粒径控制在10~35 nm之间。我们进一步将得到的GZO纳米颗粒应用于制备GZO纳米颗粒透明导电金属氧化物(TCO)薄膜，采用NP-MIST沉积方法作为我们开发的在衬底上的NP涂层方法。比较了沉积的GZO薄膜与传统的分散镀膜法制备的GZO薄膜的电阻率和透过率，结果表明，在温和的大气条件下，NP-MIST沉积是在衬底上制备高性能GZO Np基TCO薄膜的一种有前途的方法。
Gallium-doped zinc oxide (GZO) nanoparticles (NPs) have been synthesized by a solvothermal synthesis method using gallium chloride and zinc chloride as precursors in anhydrous methanol along with bases. Systematic investigations have revealed that H2O, formed through the condensation of metal hydroxides to obtain GZO NPs, not only enhances the production of layered compounds as byproducts but also accelerates Ostwald ripening to reduce the amount of doped gallium ions. To overcome H2O generation during NP growth, we first applied sodium methoxide (NaOMe) as a base for the synthesis of GZO NPs. As a result, high-performance GZO NPs were successfully obtained in a single phase, and the mean particle size of the GZO NPs was controlled from 10 to 35 nm by changing the molar ratio of the sodium hydroxide (NaOH) and NaOMe in the reaction mixture. We further applied the obtained GZO NPs to prepare GZO NP-based transparent conductive metal oxide (TCO) films using an NP-mist deposition strategy as our developed NP-coating method on substrates. The resistivity and transparency of the deposited GZO thin films were compared with those of conventional thin films prepared by a dispersion coating method, showing that NP-mist deposition is a promising method for fabricating high-performance GZO NP-based TCO thin films on substrates under mild atmospheric conditions.