Efficiency Comparison Between Si-IGBT-Based Drive and GaN-Based Drive
Efficiency Comparison Between Si-IGBT-Based Drive and GaN-Based Drive
复制标题
Si-IGBT驱动器与GaN驱动器的效率比较
DOI：
10.1109/tia.2013.2290812
复制
发表时间：
2014
影响因子：
4.4
通讯作者：
J. Honea
中科院分区：
文献类型：
--
作者：
K. Shirabe;M. Swamy;Jun;M. Hisatsune;YiFeng Wu;D. Kebort;J. Honea
高电机效率、较低的转矩涟漪、接近理想的正弦电机电流波形、较小的滤波器尺寸等是在电机驱动应用中使用高频脉宽调制（PWM）（在50至100 kHz的范围内）的一些优点。然而，更高频率的PWM也与电压反射和电机绝缘击穿问题相关联。由于高损耗，基于Si IGBT的逆变器不能在高开关频率下操作。基于SiC和GaN的逆变器的工作已经取得进展，变频驱动器（VFD）现在可以在50至200 kHz范围内的载波频率下有效地工作，因为这些器件的导通和关断损耗极低。在高频下，输出滤波器的物理和电气额定值降低，从而提高效率。交流电动机的损耗也因为正弦波形而降低。所有上述功能结合在一起提高了系统效率。本文重点比较了基于Si-IGBT的驱动器与基于6合1 GaN模块的驱动器的效率，该驱动器工作在100 kHz的载波频率下，具有输出正弦波滤波器。实验结果表明，GaN基驱动器具有更好的系统效率相比，标准的硅IGBT基驱动器。
High motor efficiency, lower torque ripple, close to ideal sinusoidal motor current waveform, smaller filter size, etc. are a few of the advantages of using high-frequency pulsewidth modulaton (PWM) (in the range of 50 to 100 kHz) in motor drive applications. However, higher frequency PWM is also associated with voltage reflection and motor insulation breakdown issues. Due to high losses, Si IGBT-based inverters cannot be operated at high switching frequency. Work on SiC and GaN-based inverter has progressed and variable-frequency drives (VFDs) can now be operated efficiently at carrier frequencies in the 50 to 200 kHz range, using these devices because of extremely low turn-on and turn-off losses. At high frequency, physical and electrical rating of output filter reduces, thereby improving efficiency. Loss in ac motors also reduces because of sinusoidal waveform. All the above features put together improves system efficiency. This paper focuses on comparing the efficiency of Si-IGBT-based drive with a 6-in-1 GaN module-based drive, which is operating at a carrier frequency of 100 kHz with an output sine wave filter. Experimental results show the GaN-based drive has a better system efficiency compared to the standard Si IGBT-based drive.