Multiexcitonic two-state lasing in a CdSe nanocrystal laser
Multiexcitonic two-state lasing in a CdSe nanocrystal laser
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DOI：
10.1063/1.1795368
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发表时间：
2004-09-27
影响因子：
4
通讯作者：
Bawendi, MG
中科院分区：
文献类型：
--
作者：
Chan, Y;Caruge, JM;Bawendi, MG
我们报道了两种不同的多激子跃迁- 1s (e)- 1s（3/2）和1P(e)-1P(3/2)（-）在二氧化钛基质中稳定的胶体CdSe纳米晶体（NCs）的同时放大自发辐射。在表面发射的分布式反馈CdSe数控激光器中实现了两个多激子跃迁的两态激光。可变条纹长度测量表明，对于半径为4.2 nm的CdSe/ZnS核壳纳米管，1P(e)-1P（3/2）跃迁的增益大约是-1S(e)-1S（3/2）跃迁的两倍。(C)美国物理研究所。
We report simultaneous amplified spontaneous emission from two different multiexcitonic transitions -1S(e)-1S(3/2) and 1P(e)-1P(3/2)(-) of colloidal CdSe nanocrystals (NCs) stabilized in high volume fraction in titania matrices. Two-state lasing from both multiexcitonic transitions is achieved in a surface-emitting distributed feedback CdSe NC laser. Variable stripe length measurements show that the gain from the 1P(e)-1P(3/2) transition is approximately twice that of the -1S(e)-1S(3/2) transition for 4.2 nm radius CdSe/ZnS core-shell NCs. (C) American Institute of Physics.