10–60-GHz Electromechanical Resonators Using Thin-Film Lithium Niobate

10–60-GHz Electromechanical Resonators Using Thin-Film Lithium Niobate
复制标题

DOI:
10.1109/tmtt.2020.3027694
复制
发表时间:
2020-10
影响因子:
4.3
通讯作者:
Yansong Yang;Ruochen Lu;Liuqing Gao;S. Gong
Yansong Yang;Ruochen Lu;Liuqing Gao;S. Gong
中科院分区:
工程技术1区
文献类型:
--
作者:
Yansong Yang;Ruochen Lu;Liuqing Gao;S. Gong

文献摘要

被引文献

相似文献

本文提出了一种适用于第五代(5G)无线通信的60 GHz微机电系统(MEMS)谐振器。宽范围的工作频率是通过采取不同的反对称兰姆波模式在400 nm厚的Z切锂的薄膜。本工作中演示的55 GHz谐振标志着压电机电设备的最高工作频率。所制造的器件显示出在$2 \times 10 ^{-3}$mm 2的基底面中提取的机械$Q$为340,$f\times Q$乘积为$1.87\times 10 ^{13}$。性能显示了LiNbO 3反对称模式器件在5G高频前端应用中的强大潜力。
This work presents a new class of microelectromechanical system (MEMS) resonator toward 60 GHz for the fifth-generation (5G) wireless communications. The wide range of the operating frequencies is achieved by resorting to different orders of the antisymmetric Lamb wave modes in a 400-nm-thick Z-cut lithium niobate thin film. The resonance of 55 GHz demonstrated in this work marks the highest operating frequency for piezoelectric electromechanical devices. The fabricated device shows an extracted mechanical $Q$ of 340 and an $f\times Q$ product of $1.87\times 10^{13}$ in a footprint of $2 \times 10^{-3}$ mm2. The performance has shown the strong potential of LiNbO3 antisymmetric mode devices for front-end applications in 5G high-band.