Infrared plasmons on heavily-doped silicon
Infrared plasmons on heavily-doped silicon
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DOI：
10.1063/1.3626050
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发表时间：
2011-08-15
影响因子：
3.2
通讯作者：
Davids, Paul S.
中科院分区：
文献类型：
--
作者：
Ginn, James C.;Jarecki, Robert L., Jr.;Davids, Paul S.
我们研究了重掺杂硅的长波红外(LWIR)光学特性，并探索了表面等离子激元(SPP)在这一光谱区域的工程化。对磷(n型硅)和硼(p型硅)注入体进行了评估，并检查了不同的盖层和热退火步骤。用椭偏仪测量了薄膜的光学性质，并与红外介电常数的Drude模型进行了拟合。研究了硅在热红外光谱中的金属行为及其对表面等离子体的空间约束和色散的影响。我们发现，表面等离子体激元在高掺杂硅上的横向空间约束在等离子体边缘附近是强亚波长的，并且在整个LWIR光谱上，对表面等离子体激元的约束增强到金属约束表面等离子体激元的10倍以上。(C)2011年美国物理研究所。[DOI：10.1063/1.3626050]
We examine the long-wave infrared (LWIR) optical characteristics of heavily-doped silicon and explore engineering of surface plasmons polaritons (SPP) in this spectral region. Both phosphorus (n-type Si) and boron (p-type Si) implants are evaluated and various cap layers and thermal annealing steps are examined. The optical properties are measured using ellipsometry and fit to a Drude model for the infrared (IR) permittivity. The predicted metallic behavior for Si in the thermal IR and its impact on the spatial confinement and dispersion for surface plasmons is studied. We find that the transverse spatial confinement for a surface plasmon on highly doped Si is strongly sub-wavelength near the plasma edge, and the confinement to the surface is enhanced to greater than 10 x that of the metal confined SPP over the entire LWIR spectrum. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626050]